Invention Grant
- Patent Title: Level shifter and semiconductor device including the same and operation method thereof
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Application No.: US16734721Application Date: 2020-01-06
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Publication No.: US10992290B2Publication Date: 2021-04-27
- Inventor: Yong-min Kim , Kyung-hoon Lee , Eun-seok Shin , Michael Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2019-0009244 20190124
- Main IPC: H03K19/0175
- IPC: H03K19/0175 ; H03K3/037 ; G09G3/3258 ; H03K19/0185

Abstract:
A level shifter for outputting an output voltage having a voltage level range different from a voltage level range of a received input voltage is disclosed. The level shifter includes: a current mirror configured to copy a reference current flowing through a first mirror transistor to a second mirror transistor; a current mirror control circuit electrically connected to the current mirror by a sink node and including a plurality of control transistors configured to control the current mirror; and an output circuit configured to output an output voltage based on a voltage level of the sink node, wherein a first control transistor of the plurality of control transistors receives the output voltage fed back to a gate terminal of the first control transistor, and a second control transistor of the plurality of control transistors receives an inverted output voltage fed back to a gate terminal of the second control transistor.
Public/Granted literature
- US20200244252A1 LEVEL SHIFTER AND SEMICONDUCTOR DEVICE INCLUDING THE SAME AND OPERATION METHOD THEREOF Public/Granted day:2020-07-30
Information query
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