Invention Grant
- Patent Title: Integrated assemblies having ferroelectric transistors with heterostructure active regions
-
Application No.: US16188432Application Date: 2018-11-13
-
Publication No.: US10998338B2Publication Date: 2021-05-04
- Inventor: Kamal M. Karda , Durai Vishak Nirmal Ramaswamy , Haitao Liu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St, John P.S.
- Main IPC: G11C11/12
- IPC: G11C11/12 ; H01L27/1159 ; H01L29/78 ; H01L29/165 ; H01L29/08 ; H01L27/11592 ; G11C11/22 ; H01L29/10
Abstract:
Some embodiments include a ferroelectric transistor having an active region which includes a first source/drain region, a second source/drain region, and a body region between the first and second source/drain regions. The body region has a different semiconductor composition than at least one of the first and second source/drain regions to enable replenishment of carrier within the body region. An insulative material is along the body region. A ferroelectric material is along the insulative material. A conductive gate material is along the ferroelectric material.
Public/Granted literature
- US20200152644A1 Integrated Assemblies Having Ferroelectric Transistors with Heterostructure Active Regions Public/Granted day:2020-05-14
Information query
