Invention Grant
- Patent Title: Memory device and manufacturing method thereof
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Application No.: US16734095Application Date: 2020-01-03
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Publication No.: US10998450B1Publication Date: 2021-05-04
- Inventor: Yong-Sheng Huang , Ming-Chyi Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L21/28 ; H01L21/762
Abstract:
A memory device includes an active region, a select gate, a control gate, and a blocking layer. The active region includes a bottom portion and a protruding portion protruding from the bottom portion. A source is in the bottom portion and a drain is in the protruding portion. The select gate is above the bottom portion. A top surface of the select gate is lower than a top surface of the protruding portion. The control gate is above the bottom portion. The blocking layer is between the select gate and the control gate.
Information query
IPC分类:
