- 专利标题: Transistor structure, display device including transistor structure, and method of manufacturing transistor structure
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申请号: US15473356申请日: 2017-03-29
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公开(公告)号: US11004870B2公开(公告)日: 2021-05-11
- 发明人: Hyun Sup Lee , Jung Hun Noh , Keun Kyu Song , Sang Hee Jang , Byung Seok Choi
- 申请人: Samsung Display Co. Ltd.
- 申请人地址: KR Yongin-si
- 专利权人: Samsung Display Co. Ltd.
- 当前专利权人: Samsung Display Co. Ltd.
- 当前专利权人地址: KR Yongin-si
- 代理机构: Innovation Counsel LLP
- 优先权: KR10-2016-0053025 20160429
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; G02F1/1362 ; G02F1/1368 ; H01L29/66 ; H01L29/786 ; H01L27/32
摘要:
A transistor structure may include a first electrode, a second electrode, a third electrode, a substrate, and a semiconductor member. The semiconductor member overlaps the third electrode and includes a first semiconductor portion, a second semiconductor portion, and a third semiconductor portion. The first semiconductor portion directly contacts the first electrode, is directly connected to the third semiconductor portion, and is connected through the third semiconductor portion to the second semiconductor portion. The second semiconductor portion directly contacts the second electrode and is directly connected to the third semiconductor portion. A minimum distance between the first semiconductor portion and the substrate is unequal to a minimum distance between the second semiconductor portion and the substrate.
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