Invention Grant
- Patent Title: Sampling circuit
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Application No.: US16918940Application Date: 2020-07-01
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Publication No.: US11005490B2Publication Date: 2021-05-11
- Inventor: Stéphane Le Tual , David Duperray , Jean-Pierre Blanc
- Applicant: STMicroelectronics SA , STMicroelectronics (Alps) SAS
- Applicant Address: FR Montrouge; FR Grenoble
- Assignee: STMicroelectronics SA,STMicroelectronics (Alps) SAS
- Current Assignee: STMicroelectronics SA,STMicroelectronics (Alps) SAS
- Current Assignee Address: FR Montrouge; FR Grenoble
- Agency: Slater Matsil, LLP
- Priority: FR1907471 20190704
- Main IPC: H03M1/12
- IPC: H03M1/12 ; H01L29/78 ; G11C27/02
Abstract:
A sampling circuit includes a metal oxide semiconductor (MOS) transistor that includes a third metallization receiving a reference voltage between a first metallization coupled to a source region of the transistor and a second metallization coupled to a drain region of the transistor.
Public/Granted literature
- US20210006256A1 SAMPLING CIRCUIT Public/Granted day:2021-01-07
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