- 专利标题： Doped, metal oxide-based chemical sensors
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申请号： US16196154申请日： 2018-11-20
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公开(公告)号： US11009475B2公开(公告)日： 2021-05-18
- 发明人: Vladimir Dobrokhotov , Alexander Larin
- 申请人： VAON, LLC
- 申请人地址： US KY Bowling Green
- 专利权人： VAON, LLC
- 当前专利权人： VAON, LLC
- 当前专利权人地址： US KY Bowling Green
- 代理机构： 21st Century IP LLC
- 代理商 Kelly Hollowell
- 主分类号： G01N27/12
- IPC分类号： G01N27/12 ; H01L29/24
摘要：
The present invention generally relates to doped, metal oxide-based sensors, wherein the doped-metal oxide is a monolayer, and platforms and integrated chemical sensors incorporating the same, methods of making the same, and methods of using the same.
公开/授权文献
- US20190391100A1 DOPED, METAL OXIDE-BASED CHEMICAL SENSORS 公开/授权日：2019-12-26
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