A semiconductor storage device includes a plurality of memory cells and a plurality of bit lines connected thereto, a plurality of sense amplifier units respectively connected to the plurality of bit lines, and a cache memory connected to the plurality of sense amplifier units. Each sense amplifier unit includes a sense node and a latch in which data transferred onto the sense node from a corresponding bit line is latched. First data latched in a first sense amplifier unit among the plurality of sense amplifier units is transferred to the cache memory, and second data latched in a second sense amplifier unit among the plurality of sense amplifier units is transferred to the sense node of the first second sense amplifier unit. Thereafter, the second data is latched in the first sense amplifier unit and transferred to the cache memory.