Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17016635Application Date: 2020-09-10
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Publication No.: US11017871B2Publication Date: 2021-05-25
- Inventor: Atsushi Umezaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Husch Blackwell LLP
- Priority: JP2012-042864 20120229
- Main IPC: G11C19/00
- IPC: G11C19/00 ; G11C19/28 ; H01L27/088 ; H01L27/12 ; G09G3/20 ; H01L29/786 ; H01L27/15 ; G09G3/36 ; H01L27/32

Abstract:
A semiconductor device which shifts a low-level signal is provided. In an example, a first transistor including a first terminal electrically connected to a first wiring and a second terminal electrically connected to a second wiring, a second transistor including a first terminal electrically connected to a third wiring and a second terminal electrically connected to the second wiring, a third transistor including a first terminal electrically connected to a fourth wiring and a second terminal electrically connected to a gate of the second transistor, a fourth transistor including a first terminal electrically connected to a fifth wiring, a second terminal electrically connected to a gate of the third transistor, and a gate electrically connected to a sixth wiring, and a first switch including a first terminal electrically connected to the third wiring and a second terminal electrically connected to a gate of the first transistor are included.
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