Methods and systems for selectively illuminated integrated photodetectors with configured launching and adaptive junction profile for bandwidth improvement may include a photonic chip comprising an input waveguide and a photodiode. The photodiode comprises an absorbing region with a p-doped region on a first side of the absorbing region and an n-doped region on a second side of the absorbing region. An optical signal is received in the absorbing region via the input waveguide, which is offset to one side of a center axis of the absorbing region; an electrical signal is generated based on the received optical signal. The first side of the absorbing region may be p-doped. P-doped and n-doped regions may alternate on the first and second sides of the absorbing region along the length of the photodiode. The absorbing region may comprise germanium, silicon, silicon/germanium, or similar material that absorbs light of a desired wavelength.