Invention Grant
- Patent Title: Load-switch gate-protection circuit
-
Application No.: US15922922Application Date: 2018-03-16
-
Publication No.: US11050417B2Publication Date: 2021-06-29
- Inventor: Dongyong Zhu , Feng Cong , FuChun Zhan
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: CN201711111411.8 20171113
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H03K17/082 ; H03K5/24

Abstract:
Gate-protection circuitry protects a transistor, such as a MOSFET, from large gate-to-source voltage differentials that can permanently damage the transistor's gate-oxide layer. A source-voltage detector selectively enables the gate-protection circuitry based on a source voltage of the transistor. The gate-protection circuit is implemented without any Zener diodes. The transistor may be a load switch that is selectively controlled to apply a supply voltage to a load.
Public/Granted literature
- US20190149144A1 LOAD-SWITCH GATE-PROTECTION CIRCUIT Public/Granted day:2019-05-16
Information query