- 专利标题: Semiconductor package with chamfered pads
-
申请号: US15815351申请日: 2017-11-16
-
公开(公告)号: US11056435B2公开(公告)日: 2021-07-06
- 发明人: Cheng-Lin Ho , Chung Chieh Chang , Ya Fang Chan , Chih-Cheng Lee
- 申请人: Advanced Semiconductor Engineering, Inc.
- 申请人地址: TW Kaohsiung
- 专利权人: Advanced Semiconductor Engineering, Inc.
- 当前专利权人: Advanced Semiconductor Engineering, Inc.
- 当前专利权人地址: TW Kaohsiung
- 代理机构: Foley & Lardner LLP
- 主分类号: H01L23/535
- IPC分类号: H01L23/535 ; H01L21/02 ; H01L23/498 ; H01L23/00
摘要:
At least some embodiments of the present disclosure relate to a substrate for packaging a semiconductor device package. The substrate comprises a dielectric layer, a first conductive element adjacent to the dielectric layer, a second conductive element adjacent to the dielectric layer, and a third conductive element adjacent to the dielectric layer. The first conductive element has a first central axis in a first direction and a second central axis in a second direction. The first conductive element comprises a first chamfer and a second chamfer adjacent to the first chamfer. The second conductive element has a first central axis in the first direction and a second central axis in the second direction. The third conductive element has a first central axis in the first direction and a second central axis in the second direction. The first central axes of the first, second, and third conductive elements are substantially parallel to one another in the first direction and are misaligned from one another. The second central axes of the first and second conductive elements are substantially co-linear in the second direction. The second central axis of the third conductive element is substantially parallel to and misaligned from the second central axes of the first and second conductive elements. The first chamfer and the second chamfer are separated by at least one of the first central axis and the second central axis of the first conductive element and are substantially asymmetric.
公开/授权文献
信息查询
IPC分类: