公开(公告)号：US12107056B2

公开(公告)日：2024-10-01

申请号：US16745331

申请日：2020-01-16

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Ya Fang Chan ,  Yuan-Feng Chiang ,  Po-Wei Lu

IPC分类号： H01L23/66 ,  H01L21/56 ,  H01L21/768 ,  H01L23/31 ,  H01L23/495

CPC分类号： H01L23/66 ,  H01L21/56 ,  H01L21/76804 ,  H01L23/3121 ,  H01L23/49506 ,  H01L2223/6644 ,  H01L2223/6677

摘要： The present disclosure provides a semiconductor device package. The semiconductor device package includes a dielectric layer. The semiconductor device package further includes an antenna structure disposed in the dielectric layer. The semiconductor device package further includes a semiconductor device disposed on the dielectric layer. The semiconductor device package further includes an encapsulant covering the semiconductor device. The semiconductor device package further includes a conductive pillar having a first portion and a second portion. The first portion surrounded by the encapsulant and the second portion embedded in the dielectric layer.

公开(公告)号：US11521958B2

公开(公告)日：2022-12-06

申请号：US16675011

申请日：2019-11-05

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Ya Fang Chan ,  Yuan-Feng Chiang

IPC分类号： H01L25/065 ,  H01L25/00 ,  H01L21/768 ,  H01L23/00 ,  H01L23/31 ,  H01L27/108 ,  H01L29/66 ,  H01L21/285 ,  H01L21/311 ,  H01L21/3213 ,  H01L23/528 ,  H01L29/51 ,  H01L21/3115 ,  H01L21/265 ,  H01L21/28 ,  H01L21/02 ,  H01L21/3065 ,  H01L23/498 ,  H01L21/762 ,  H01L21/56 ,  H01L21/48

摘要： A semiconductor device package includes a redistribution layer, a plurality of conductive pillars, a reinforcing layer and an encapsulant. The conductive pillars are in direct contact with the first redistribution layer. The reinforcing layer surrounds a lateral surface of the conductive pillars. The encapsulant encapsulates the first redistribution layer and the reinforcing layer. The conductive pillars are separated from each other by the reinforcing layer.

公开(公告)号：US11056435B2

公开(公告)日：2021-07-06

申请号：US15815351

申请日：2017-11-16

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Cheng-Lin Ho ,  Chung Chieh Chang ,  Ya Fang Chan ,  Chih-Cheng Lee

IPC分类号： H01L23/535 ,  H01L21/02 ,  H01L23/498 ,  H01L23/00

摘要： At least some embodiments of the present disclosure relate to a substrate for packaging a semiconductor device package. The substrate comprises a dielectric layer, a first conductive element adjacent to the dielectric layer, a second conductive element adjacent to the dielectric layer, and a third conductive element adjacent to the dielectric layer. The first conductive element has a first central axis in a first direction and a second central axis in a second direction. The first conductive element comprises a first chamfer and a second chamfer adjacent to the first chamfer. The second conductive element has a first central axis in the first direction and a second central axis in the second direction. The third conductive element has a first central axis in the first direction and a second central axis in the second direction. The first central axes of the first, second, and third conductive elements are substantially parallel to one another in the first direction and are misaligned from one another. The second central axes of the first and second conductive elements are substantially co-linear in the second direction. The second central axis of the third conductive element is substantially parallel to and misaligned from the second central axes of the first and second conductive elements. The first chamfer and the second chamfer are separated by at least one of the first central axis and the second central axis of the first conductive element and are substantially asymmetric.

公开(公告)号：US11791227B2

公开(公告)日：2023-10-17

申请号：US17317770

申请日：2021-05-11

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Kuoching Cheng ,  Yuan-Feng Chiang ,  Ya Fang Chan ,  Wen-Long Lu ,  Shih-Yu Wang

IPC分类号： H01L23/31 ,  H01L25/065 ,  H01L21/56 ,  H01L23/538 ,  H01L23/16

CPC分类号： H01L23/31 ,  H01L21/56 ,  H01L23/16 ,  H01L23/5386 ,  H01L25/0655

摘要： An electronic device package and a method for manufacturing an electronic device package are provided. The electronic device package includes electronic device structure which includes a first electronic device and a first encapsulant, a second electronic device, and a second encapsulant. The first encapsulant encapsulates the first electronic device. The second electronic device is adjacent to the electronic device structure. The second encapsulant encapsulates the electronic device structure and the second electronic device. A first extension line along a lateral surface of the first electronic device and a second extension line along a lateral surface of the first encapsulant define a first angle, the second extension line along the lateral surface of the first encapsulant and a third extension line along a lateral surface of the second electronic device define a second angle, and the first angle is different from the second angle.

公开(公告)号：US11037853B1

公开(公告)日：2021-06-15

申请号：US16717933

申请日：2019-12-17

申请人： Advanced Semiconductor Engineering, Inc.

发明人： Ya Fang Chan ,  Yuan-Feng Chiang ,  Po-Wei Lu

IPC分类号： H01L23/04 ,  H01L23/367 ,  H01L23/433 ,  H01L25/065 ,  H01L21/768 ,  H01L25/00 ,  H01L21/48

摘要： A semiconductor heat dissipation structure includes a first semiconductor device including a first active surface and a first back surface opposite to the first active surface, a second semiconductor device including a second active surface and a second back surface opposite to the second active surface, a first heat conductive layer embedded in the first back surface of the first semiconductor device, a second heat conductive layer embedded in the second back surface of the second semiconductor device, and a third heat conductive layer disposed adjoining the first heat conductive layer and extending to the first active surface of the first semiconductor device. The first back surface of the first semiconductor device and the second back surface of the second semiconductor device are in contact with each other. At least a portion of the first heat conductive layer are in contact with the second heat conductive layer.