Invention Grant
- Patent Title: Quantum dot materials and method of manufacturing thereof
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Application No.: US16238538Application Date: 2019-01-03
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Publication No.: US11056619B2Publication Date: 2021-07-06
- Inventor: Chun-Feng Lai
- Applicant: FENG CHIA UNIVERSITY
- Applicant Address: TW Taichung
- Assignee: FENG CHIA UNIVERSITY
- Current Assignee: FENG CHIA UNIVERSITY
- Current Assignee Address: TW Taichung
- Agent Cheng-Ju Chiang
- Priority: TW107116211 20180511
- Main IPC: H01L33/50
- IPC: H01L33/50 ; C09K11/02 ; C09K11/66

Abstract:
A quantum dot material and a method of manufacturing quantum dot materials are provided. The method comprises a step of providing a quantum dot solution and a silicon compound, a step of introducing the quantum dot solution and the silicon compound to a cross-linking agent and an ammonia solution (NH4OH) for cross-linking reaction, and a step of obtaining a quantum dot material coated with a silicon oxide (SiOx) material.
Information query
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