- 专利标题: Quantum dot materials and method of manufacturing thereof
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申请号: US16238538申请日: 2019-01-03
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公开(公告)号: US11056619B2公开(公告)日: 2021-07-06
- 发明人: Chun-Feng Lai
- 申请人: FENG CHIA UNIVERSITY
- 申请人地址: TW Taichung
- 专利权人: FENG CHIA UNIVERSITY
- 当前专利权人: FENG CHIA UNIVERSITY
- 当前专利权人地址: TW Taichung
- 代理商 Cheng-Ju Chiang
- 优先权: TW107116211 20180511
- 主分类号: H01L33/50
- IPC分类号: H01L33/50 ; C09K11/02 ; C09K11/66
摘要:
A quantum dot material and a method of manufacturing quantum dot materials are provided. The method comprises a step of providing a quantum dot solution and a silicon compound, a step of introducing the quantum dot solution and the silicon compound to a cross-linking agent and an ammonia solution (NH4OH) for cross-linking reaction, and a step of obtaining a quantum dot material coated with a silicon oxide (SiOx) material.
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