Resistive random-access memory cell structures including a first and second resistive random-access memory element stacks, each including an anode and a cathode; a pass transistor having first and second source/drain terminals, and a gate terminal. The gate terminal is connected to the anodes of the first and second resistive random-access memory element stacks. An isolation layer is disposed upon the gate terminal. The isolation layer includes at least two vias, each defined by a perimeter extending from a top surface of the isolation layer to a bottom surface of the isolation layer, each perimeter exposes a portion of the gate. The first and second resistive random-access memory element stacks include a bottom electrode, a switching layer, a top electrode and a low-resistance film. The gate is the bottom electrode. The switching layer, top electrode and low resistance film are disposed in the vias.