Disclosed are a thin film transistor includes a gate electrode, an active layer including a semiconductor material and a first elastomer, a gate insulator between the gate electrode and the active layer, and a source electrode and a drain electrode electrically connected to the active layer, wherein each of the semiconductor material and the first elastomer has a hydrogen bondable moiety, and the semiconductor material and the first elastomer are subjected to a dynamic intermolecular bonding by a hydrogen bond and a thin film transistor array and an electronic device including the same.