Invention Grant
- Patent Title: Method of manufacturing semiconductor device
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Application No.: US16547294Application Date: 2019-08-21
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Publication No.: US11081438B2Publication Date: 2021-08-03
- Inventor: Yoshiaki Sato , Yoshinori Miyaki , Junichi Arita
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2018-176123 20180920
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/00 ; H01L23/31 ; H01L21/56 ; H01L21/78 ; H01L21/48
Abstract:
An object of the present invention is to improve manufacturing efficiency of a semiconductor device. The method of manufacturing a semiconductor device includes a sealing step of sealing a semiconductor chip mounted on the wiring substrate. The sealing step includes a step of arranging the wiring substrate between an upper mold and a lower mold, suctioning a lower surface of the wiring substrate with the plurality of suction holes, thereby holding the wiring substrate the upper mold, and a step of sealing the semiconductor chip, an upper surface of the wiring substrate, and the plurality of side surfaces of the wiring substrate such that each of the semiconductor chip, the upper surface of the wiring substrate, and the plurality of side surfaces of the wiring substrate is covered with the resin in the lower mold.
Public/Granted literature
- US20200098679A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2020-03-26
Information query
IPC分类:
