Invention Grant
- Patent Title: Nonvolatile memory capable of outputting data using wraparound scheme, computing system having the same, and read method thereof
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Application No.: US16789526Application Date: 2020-02-13
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Publication No.: US11086571B2Publication Date: 2021-08-10
- Inventor: Jinwoo Kim , Jaegeun Park , Youngjin Cho
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2016-0015759 20160211
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F11/10 ; G06F11/00 ; G06F13/28 ; G06F12/0868 ; G06F12/0831 ; G06F12/0879

Abstract:
A read method executed by a computing system includes a processor, at least one nonvolatile memory, and at least one cache memory performing a cache function of the at least one nonvolatile memory. The method includes receiving a read request regarding a critical word from the processor. A determination is made whether a cache miss is generated, through a tag determination operation corresponding to the read request. Page data corresponding to the read request is received from the at least one nonvolatile memory in a wraparound scheme when a result of the tag determination operation indicates that the cache miss is generated. The critical word is output to the processor when the critical word of the page data is received.
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