- 专利标题: Phase charge sharing
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申请号: US16926476申请日: 2020-07-10
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公开(公告)号: US11087829B2公开(公告)日: 2021-08-10
- 发明人: James S. Rehmeyer , George B. Raad , Debra M. Bell , Markus H. Geiger , Anthony D. Veches
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Holland & Hart LLP
- 主分类号: G11C11/4094
- IPC分类号: G11C11/4094 ; G11C11/408 ; G11C11/4096 ; G11C11/406
摘要:
Methods, systems, and devices for phase charge sharing are described. In some memory systems or memory devices, one or more decoders may be used to bias access lines of a memory die. The decoders may transfer voltage or current between a first conductive line of the decoder and a second conductive line of the decoder via a shorting device. Transferring the voltage or current may be performed as part of or in association with an operation (e.g., an activate or pre-charge operation) to access one or more memory cells of the memory die. In some examples, the decoders may transfer voltage or current between a first conductive line of a decoder associated with a first refresh activity and a second conductive line of the decoder associated with a second refresh activity via a shorting device.
公开/授权文献
- US20200342931A1 PHASE CHARGE SHARING 公开/授权日:2020-10-29
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