Invention Grant
- Patent Title: Image sensor employing avalanche diode and pixel circuit and operating method thereof
-
Application No.: US16872626Application Date: 2020-05-12
-
Publication No.: US11102439B2Publication Date: 2021-08-24
- Inventor: Tso-Sheng Tsai
- Applicant: PIXART IMAGING INC.
- Applicant Address: TW Hsin-Chu County
- Assignee: PIXART IMAGING INC.
- Current Assignee: PIXART IMAGING INC.
- Current Assignee Address: TW Hsin-Chu County
- Agency: Hauptman Ham, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/378 ; H04N5/374 ; H01L31/107

Abstract:
There is provided an image sensor employing an avalanche diode. The image sensor includes a plurality of pixel circuits arranged in a matrix, a plurality of pulling circuits and a global current source circuit. Each of the plurality of pixel circuits includes a single photon avalanche diode and four P-type or N-type transistors. Each of the plurality of pulling circuits is arranged corresponding to one pixel circuit column. The global current source circuit is used to form a current mirror with each of the plurality of pulling circuits.
Public/Granted literature
- US20200275044A1 IMAGE SENSOR EMPLOYING AVALANCHE DIODE AND PIXEL CIRCUIT AND OPERATING METHOD THEREOF Public/Granted day:2020-08-27
Information query
IPC分类: