Invention Grant
- Patent Title: Structure including SiOC layer and method of forming same
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Application No.: US16800114Application Date: 2020-02-25
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Publication No.: US11114294B2Publication Date: 2021-09-07
- Inventor: Bed Prasad Sharma , Shankar Swaminathan , YoungChol Byun , Eric James Shero
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/34 ; C23C16/36 ; C23C28/04 ; C23C16/455
Abstract:
A method for forming a layer comprising SiOC on a substrate is disclosed. An exemplary method includes selectively depositing a layer comprising silicon nitride on the first material relative to the second material and depositing the layer comprising SiOC overlying the layer comprising silicon nitride.
Public/Granted literature
- US20200286725A1 STRUCTURE INCLUDING SiOC LAYER AND METHOD OF FORMING SAME Public/Granted day:2020-09-10
Information query
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