Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16831958Application Date: 2020-03-27
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Publication No.: US11114568B2Publication Date: 2021-09-07
- Inventor: Takeshi Sakai , Yuichiro Hanyu , Masahiro Watabe
- Applicant: Japan Display Inc.
- Applicant Address: JP Minato-ku
- Assignee: Japan Display Inc.
- Current Assignee: Japan Display Inc.
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2017-086081 20170425
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L21/02 ; H01L21/383 ; H01L21/385 ; H01L21/428 ; H01L29/423 ; G02F1/1343 ; H01L27/32 ; G02F1/1368
Abstract:
The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.
Public/Granted literature
- US20200227569A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-07-16
Information query
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