Invention Grant
- Patent Title: Cross-point memory and methods for forming of the same
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Application No.: US16866302Application Date: 2020-05-04
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Publication No.: US11114613B2Publication Date: 2021-09-07
- Inventor: Fabio Pellizzer , Innocenzo Tortorelli , Andrea Ghetti
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L45/00 ; H01L27/24

Abstract:
The disclosed technology generally relates to integrated circuit devices, and in particular to cross-point memory arrays and methods for fabricating the same. Line stacks are formed, including a storage material line disposed over lower a conductive line. Upper conductive lines are formed over and crossing the line stacks, exposing portions of the line stacks between adjacent upper conductive lines. After forming the upper conductive lines, storage elements are formed at intersections between the lower conductive lines and the upper conductive lines by removing storage materials from exposed portions of the line stacks, such that each storage element is laterally surrounded by spaces. A continuous sealing material laterally surrounds each of the storage elements.
Public/Granted literature
- US20200266343A1 CROSS-POINT MEMORY AND METHODS FOR FORMING OF THE SAME Public/Granted day:2020-08-20
Information query
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