Invention Grant
- Patent Title: Tunable hardmask for overlayer metrology contrast
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Application No.: US16542502Application Date: 2019-08-16
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Publication No.: US11121024B2Publication Date: 2021-09-14
- Inventor: Ekmini A. De Silva , Nelson Felix , Indira Seshadri , Stuart A. Sieg
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Abdy Raissinia
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L23/544 ; H01L21/027 ; H01L21/768 ; H01L21/48 ; B82Y40/00
Abstract:
A tunable amorphous silicon layer for use with multilayer patterning stacks can be used to maximize transparency and minimize reflections so as to improve overlay metrology contrast. By increasing the hydrogen content in the amorphous silicon layer, the extinction coefficient (k) value and the refractive index (n) value can be decreased to desired values. Methods for improving overlay metrology contrast with the tunable amorphous silicon layer are disclosed.
Information query
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