Invention Grant
- Patent Title: Transistors comprising two-dimensional materials and related semiconductor devices, systems, and methods
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Application No.: US16113113Application Date: 2018-08-27
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Publication No.: US11121258B2Publication Date: 2021-09-14
- Inventor: Witold Kula , Gurtej S. Sandhu , John A. Smythe
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/24 ; H01L27/105 ; H01L21/02 ; H01L29/66
Abstract:
A transistor comprising a channel region on a material is disclosed. The channel region comprises a two-dimensional material comprising opposing sidewalls and oriented perpendicular to the material. A gate dielectric is on the two-dimensional material and gates are on the gate dielectric. Semiconductor devices and systems including at least one transistor are disclosed, as well as methods of forming a semiconductor device.
Public/Granted literature
- US20200066917A1 TRANSISTORS COMPRISING TWO-DIMENSIONAL MATERIALS AND RELATED SEMICONDUCTOR DEVICES, SYSTEMS, AND METHODS Public/Granted day:2020-02-27
Information query
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