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公开(公告)号：US20220320179A1
公开(公告)日：2022-10-06
申请号：US17806674
申请日：2022-06-13
Applicant: Micron Technology, Inc.
Inventor： Witold Kula , Wayne I. Kinney , Gurtej S. Sandhu
Abstract: A magnetic cell core includes a seed region with a plurality of magnetic regions and a plurality of nonmagnetic regions thereover. The seed region provides a template that enables formation of an overlying nonmagnetic region with a microstructure that enables formation of an overlying free region with a desired crystal structure. The free region is disposed between two nonmagnetic regions, which may both be configured to induce surface/interface magnetic anisotropy. The structure is therefore configured to have a high magnetic anisotropy strength, a high energy barrier ratio, high tunnel magnetoresistance, a low programming current, low cell-to-cell electrical resistance variation, and low cell-to-cell variation in magnetic properties. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.
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公开(公告)号：US10121824B2
公开(公告)日：2018-11-06
申请号：US15642577
申请日：2017-07-06
Applicant: Micron Technology, Inc.
Inventor： Wayne I. Kinney , Witold Kula , Stephen J. Kramer
Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random-access memory (STT-MRAM) systems, and methods of fabrication.
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公开(公告)号：US10014466B2
公开(公告)日：2018-07-03
申请号：US15690013
申请日：2017-08-29
Applicant: Micron Technology, Inc.
Inventor： Manzar Siddik , Andy Lyle , Witold Kula
CPC classification number: H01L43/12 , G11C11/161 , H01L43/08 , H01L43/10 , H05K999/99
Abstract: A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magnetoresistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy-inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.
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公开(公告)号：US09876053B2
公开(公告)日：2018-01-23
申请号：US15289610
申请日：2016-10-10
Applicant: Micron Technology, Inc.
Inventor： Witold Kula , Wayne I. Kinney , Gurtej S. Sandhu
CPC classification number: H01L27/222 , G11C11/161 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A magnetic cell core includes a seed region with a plurality of magnetic regions and a plurality of nonmagnetic regions thereover. The seed region provides a template that enables formation of an overlying nonmagnetic region with a microstructure that enables formation of an overlying free region with a desired crystal structure. The free region is disposed between two nonmagnetic regions, which may both be configured to induce surface/interface magnetic anisotropy. The structure is therefore configured to have a high magnetic anisotropy strength, a high energy barrier ratio, high tunnel magnetoresistance, a low programming current, low cell-to-cell electrical resistance variation, and low cell-to-cell variation in magnetic properties. Methods of fabrication, memory arrays, memory systems, and electronic systems are also disclosed.
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公开(公告)号：US09711565B2
公开(公告)日：2017-07-18
申请号：US15168054
申请日：2016-05-29
Applicant: Micron Technology, Inc.
Inventor： Wayne I. Kinney , Witold Kula , Stephen J. Kramer
CPC classification number: H01L27/222 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3218 , H01F10/329 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random access memory (STT-MRAM) systems, and methods of fabrication.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20170200887A1
公开(公告)日：2017-07-13
申请号：US15468225
申请日：2017-03-24
Applicant: Micron Technology, Inc.
Inventor： Manzar Siddik , Andy Lyle , Witold Kula
CPC classification number: H01L43/12 , G11C11/161 , H01L43/08 , H01L43/10
Abstract: A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magnetoresistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy-inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.
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公开(公告)号：US09660184B2
公开(公告)日：2017-05-23
申请号：US15084688
申请日：2016-03-30
Applicant: Micron Technology, Inc.
Inventor： Manzar Siddik , Witold Kula
Abstract: Spin transfer torque memory cells and methods of forming the same are described herein. As an example, spin transfer torque memory cells may include an amorphous material, a storage material formed on the amorphous material, wherein the storage material is substantially boron free, an interfacial perpendicular magnetic anisotropy material formed on the storage material, a reference material formed on the interfacial perpendicular magnetic anisotropy material, wherein the reference material is substantially boron free, a buffer material formed on the reference material and a pinning material formed on the buffer material.
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公开(公告)号：US09530959B2
公开(公告)日：2016-12-27
申请号：US14687280
申请日：2015-04-15
Applicant: Micron Technology, Inc.
Inventor： Manzar Siddik , Witold Kula , Gurtej S. Sandhu
Abstract: A method of forming a magnetic electrode of a magnetic tunnel junction comprises forming non-magnetic MgO-comprising material over conductive material of the magnetic electrode being formed. An amorphous metal is formed over the MgO-comprising material. Amorphous magnetic electrode material comprising Co and Fe is formed over the amorphous metal. The amorphous magnetic electrode material is devoid of B. Non-magnetic tunnel insulator material comprising MgO is formed directly against the amorphous magnetic electrode material. The tunnel insulator material is devoid of B. After forming the tunnel insulator material, the amorphous Co and Fe-comprising magnetic electrode material is annealed at a temperature of at least about 250° C. to form crystalline Co and Fe-comprising magnetic electrode material from an MgO-comprising surface of the tunnel insulator material. The crystalline Co and Fe-comprising magnetic electrode material is devoid of B. Other method and non-method embodiments are disclosed.
Abstract translation: 形成磁性隧道结的磁极的方法包括在形成的磁极的导电材料上形成非磁性的含MgO材料。 在包含MgO的材料上形成无定形金属。 包含Co和Fe的非晶磁性电极材料形成在无定形金属上。 无定形磁极材料不含B.直接与非晶磁性电极材料形成包含MgO的非磁性隧道绝缘体材料。 隧道绝缘体材料没有B.在形成隧道绝缘体材料之后，在至少约250℃的温度下对包含无定形Co和Fe的磁性电极材料进行退火以形成含Co和Fe的结晶的电极材料 从隧道绝缘体材料的包含MgO的表面。 含有Co和Fe的结晶的电极材料不含B。公开了其它方法和非方法的实施方案。
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公开(公告)号：US20160308122A1
公开(公告)日：2016-10-20
申请号：US14687280
申请日：2015-04-15
Applicant: Micron Technology, Inc.
Inventor： Manzar Siddik , Witold Kula , Gurtej S. Sandhu
Abstract: A method of forming a magnetic electrode of a magnetic tunnel junction comprises forming non-magnetic MgO-comprising material over conductive material of the magnetic electrode being formed. An amorphous metal is formed over the MgO-comprising material. Amorphous magnetic electrode material comprising Co and Fe is formed over the amorphous metal. The amorphous magnetic electrode material is devoid of B. Non-magnetic tunnel insulator material comprising MgO is formed directly against the amorphous magnetic electrode material. The tunnel insulator material is devoid of B. After forming the tunnel insulator material, the amorphous Co and Fe-comprising magnetic electrode material is annealed at a temperature of at least about 250° C. to form crystalline Co and Fe-comprising magnetic electrode material from an MgO-comprising surface of the tunnel insulator material. The crystalline Co and Fe-comprising magnetic electrode material is devoid of B. Other method and non-method embodiments are disclosed.
Abstract translation: 形成磁性隧道结的磁极的方法包括在形成的磁极的导电材料上形成非磁性的含MgO材料。 在包含MgO的材料上形成无定形金属。 包含Co和Fe的非晶磁性电极材料形成在无定形金属上。 无定形磁极材料不含B.直接与非晶磁性电极材料形成包含MgO的非磁性隧道绝缘体材料。 隧道绝缘体材料没有B.在形成隧道绝缘体材料之后，在至少约250℃的温度下对包含无定形Co和Fe的磁性电极材料进行退火以形成含Co和Fe的结晶的电极材料 从隧道绝缘体材料的包含MgO的表面。 含有Co和Fe的结晶的电极材料不含B。公开了其它方法和非方法的实施方案。
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公开(公告)号：US20160308117A1
公开(公告)日：2016-10-20
申请号：US15187488
申请日：2016-06-20
Applicant: Micron Technology, Inc.
Inventor： Gurtej S. Sandhu , Witold Kula , Wayne I. Kinney
CPC classification number: H01L43/02 , G11C11/161 , H01L27/222 , H01L27/224 , H01L27/226 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Methods of forming memory cells, magnetic memory cell structures, and arrays of magnetic memory cell structures are disclosed. Embodiments of the methods include patterning a precursor structure to form a stepped structure including at least an upper discrete feature section and a lower feature section with a broader width, length, or both than the upper discrete feature section. The method uses patterning acts directed along a first axis, e.g., an x-axis, and then along a second axis, e.g., a y-axis, that is perpendicular to or about perpendicular to the first axis. The patterning acts may therefore allow for more uniformity between a plurality of formed, neighboring cell core structures, even at dimensions below about thirty nanometers. Magnetic memory structures and memory cell arrays are also disclosed.
Abstract translation: 公开了形成存储单元，磁存储单元结构和磁存储单元结构阵列的方法。 方法的实施例包括图案化前体结构以形成包括至少上部离散特征部分和具有更宽的宽度，长度或两者比较高离散特征部分的下部特征部分的阶梯式结构。 该方法使用沿着第一轴线例如x轴，然后沿着垂直于第一轴线或垂直于第一轴线的第二轴线，例如y轴定向的图案化动作。 因此，即使在低于约三十纳米的尺寸下，图案化动作也可允许在多个形成的相邻电池芯结构之间的更均匀性。 还公开了磁存储器结构和存储单元阵列。
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