- 专利标题: Graphene-copper composite structure and manufacturing method
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申请号: US15697114申请日: 2017-09-06
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公开(公告)号: US11127509B2公开(公告)日: 2021-09-21
- 发明人: Horst Jakob Adams
- 申请人: UltraConductive Copper Company Inc.
- 申请人地址: US MA Lexington
- 专利权人: UltraConductive Copper Company Inc.
- 当前专利权人: UltraConductive Copper Company Inc.
- 当前专利权人地址: US MA Lexington
- 代理机构: Leydig, Voit & Mayer, Ltd.
- 主分类号: H01B1/04
- IPC分类号: H01B1/04 ; H01B1/02 ; H01B13/00 ; C23C16/26 ; B32B9/04
摘要:
A composite structure comprises a copper layer and first and second graphene layers sandwiching the copper layer, wherein the composite structure provides electron-path tunnels between the copper layer and the first and second graphene layers. The electron-path tunnels may enhance the electrical conductivity. A multilayer composite structure comprises a first copper layer, a first graphene layer on the first copper layer, a second graphene layer on the first graphene layer, and a second copper layer on the second graphene layer.
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