Invention Grant
- Patent Title: Substrate for front side type imager and method of manufacturing such a substrate
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Application No.: US16477374Application Date: 2018-01-10
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Publication No.: US11127775B2Publication Date: 2021-09-21
- Inventor: Walter Schwarzenbach , Oleg Kononchuk , Ludovic Ecarnot , Christelle Michau
- Applicant: Soitec
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Priority: FR1750237 20170111
- International Application: PCT/FR2018/050053 WO 20180110
- International Announcement: WO2018/130780 WO 20180719
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L27/12
Abstract:
A substrate for a front-side-type image sensor includes, successively, a supporting semiconductor substrate, an electrically insulating layer, and a semiconductor layer, known as the active layer. The active layer is an epitaxial layer of silicon-germanium having a germanium content of less than 10%. The disclosure also relates to a method for the production of such a substrate.
Information query
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