Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16554207Application Date: 2019-08-28
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Publication No.: US11128131B2Publication Date: 2021-09-21
- Inventor: Naohiro Yoshimura , Osamu Soma
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2018-175242 20180919
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H02H11/00 ; H02H1/00 ; H02H3/04

Abstract:
The power control device reliably disconnects the current path of the failed output transistor. In particular, the power control device includes output transistors, an output terminal, bonding wires connecting the output transistors to the output terminal, output transistor driving circuits controlling the output of the output transistors, and a failure detection circuit detecting the failure of the output transistors. When the failure detection circuit detects the failure of the output transistors and outputs the failure detection signals, the output transistor drive circuits control the outputs of the output transistors so that a larger current flows through the bonding wires than when the failure is not detected.
Public/Granted literature
- US20200091714A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-03-19
Information query
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