Invention Grant
- Patent Title: Piezoelectric thin-film sensor and use thereof
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Application No.: US15947429Application Date: 2018-04-06
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Publication No.: US11131589B2Publication Date: 2021-09-28
- Inventor: Wei-Yan Shih
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Michael A. Davis, Jr.; Charles A. Brill; Frank D. Cimino
- Main IPC: G01L1/16
- IPC: G01L1/16 ; G01P15/09 ; G01P15/12

Abstract:
A piezoelectric sensor comprises a support structure, a channel extending through the support structure, a sensing material stack coupled to the support structure and extending over the channel, and a filler material disposed within the channel and over the sensing material stack. The sensing material stack comprises an structural layer, a first electrode layer disposed on the structural layer, a piezoelectric material disposed in a piezoelectric layer on the first electrode, and a second electrode disposed on the piezoelectric layer opposite the first electrode layer.
Public/Granted literature
- US20180231423A1 PIEZOELECTRIC THIN-FILM SENSOR AND USE THEREOF Public/Granted day:2018-08-16
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