Invention Grant
- Patent Title: Feedback for power management of a memory die using shorting
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Application No.: US16740281Application Date: 2020-01-10
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Publication No.: US11133052B2Publication Date: 2021-09-28
- Inventor: Baekkyu Choi , Thomas H. Kinsley , Fuad Badrieh
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C11/4074
- IPC: G11C11/4074 ; G06F3/06

Abstract:
Methods, systems, and devices for feedback for power management of a memory die using shorting are described. A memory device may short a first rail with a voltage source for communicating feedback regarding a supply voltage to a power management component, such as a power management integrated circuit of a memory system. The memory device may detect a condition of one or more voltage rails for delivering power coupled with the array of memory cells. The memory device may short a first rail of the network of components for delivering power with a voltage source based on detecting the condition. In some cases, the memory device may generate a feedback signal across the first rail of the network of components for delivering power based on shorting the first rail.
Public/Granted literature
- US20210217455A1 FEEDBACK FOR POWER MANAGEMENT OF A MEMORY DIE USING SHORTING Public/Granted day:2021-07-15
Information query
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