Invention Grant
- Patent Title: Sensing and tuning for memory die power management
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Application No.: US16863967Application Date: 2020-04-30
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Publication No.: US11133053B2Publication Date: 2021-09-28
- Inventor: Fuad Badrieh , Thomas H. Kinsley , Baekkyu Choi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C11/4074

Abstract:
Techniques, apparatus, and devices for managing power in a memory die are described. A memory die may include an array of memory cells and one or more voltage sensors. Each voltage sensor may be on the same substrate as the array of memory cells and may sense a voltage at a location associated with the array. The voltage sensors may generate one or more analog voltage signals that may be converted to one or more digital signals on the memory die. In some cases, the analog voltage signals may be converted to digital signals using an oscillator and a counter on the memory die. The digital signal may be provided to a power management integrated circuit (PMIC), which may adjust a voltage supplied to the array based on the digital signal.
Public/Granted literature
- US20200258563A1 SENSING AND TUNING FOR MEMORY DIE POWER MANAGEMENT Public/Granted day:2020-08-13
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