- 专利标题： Gate electrode and method for manufacturing the same, and method for manufacturing array substrate
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申请号： US16303959申请日： 2018-05-23
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公开(公告)号： US11133196B2公开(公告)日： 2021-09-28
- 发明人: Bin Zhang , Chienhung Liu , Yucheng Chan , Xuefei Sun , Tingting Zhou
- 申请人： BOE TECHNOLOGY GROUP CO., LTD.
- 申请人地址： CN Beijing
- 专利权人： BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人： BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人地址： CN Beijing
- 代理机构： Nath, Goldberg & Meyer
- 代理商 Joshua B. Goldberg
- 优先权： CN201710389075.7 20170526
- 国际申请： PCT/CN2018/087970 WO 20180523
- 国际公布： WO2018/214899 WO 20181129
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L29/66 ; H01L29/786 ; H01L21/324 ; H01L21/02
摘要：
A gate electrode and a method for manufacturing the same, and a method for manufacturing an array substrate are provided. The method for manufacturing a gate electrode may include: providing a substrate, wherein the substrate includes a gate electrode region and a non-gate electrode region; and forming a gate electrode layer on the substrate, wherein the gate electrode layer includes a conductive portion corresponding to the gate electrode region and a transparent portion corresponding to the non-gate electrode region. According to the gate electrode and the method for manufacturing the same, and the method for manufacturing an array substrate, step difference can be eliminated, thereby avoiding an influence of the step difference on the crystallization property of a polysilicon material when an Excimer Laser Annealing (ELA) process is performed on the amorphous silicon layer, and obtaining a better crystallization effect.
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