An example of an apparatus includes a plurality of memory cells arranged in a plurality of NAND strings that are connected to a source line and a control circuit connected to the source line. The control circuit is configured to provide a first current to the source line to pre-charge the source line to a target voltage for sensing data states of the plurality of memory cells and provide a second current to the source line to return the source line to the target voltage in a recovery period between sensing data states. The control circuit is configured to provide the second current at any one of a plurality of current levels.