Invention Grant
- Patent Title: Wiring structure and method for manufacturing the same
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Application No.: US16812235Application Date: 2020-03-06
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Publication No.: US11139232B2Publication Date: 2021-10-05
- Inventor: Wen Hung Huang
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/00 ; H01L21/48

Abstract:
A wiring structure and a method for manufacturing a wiring structure are provided. The wiring structure includes a first conductive structure, a second conductive structure, a dent structure and an adhesion layer. The first conductive structure includes at least one dielectric layer and at least one circuit layer in contact with the dielectric layer. The second conductive structure includes at least one dielectric layer and at least one circuit layer in contact with the dielectric layer. The dent structure is attached to the first conductive structure. The adhesion layer is interposed between the first conductive structure and the second conductive structure to bond the first conductive structure and the second conductive structure together. A periphery portion of the adhesion layer is disposed in a gap between the dent structure and the second conductive structure.
Public/Granted literature
- US20210280505A1 WIRING STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2021-09-09
Information query
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