- 专利标题： Semiconductor memory device
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申请号： US16446590申请日： 2019-06-19
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公开(公告)号： US11139243B2公开(公告)日： 2021-10-05
- 发明人: Feng-Yi Chang , Shih-Fang Tzou , Fu-Che Lee , Chien-Cheng Tsai , Feng-Ming Huang
- 申请人： UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- 申请人地址： TW Hsin-Chu; CN Quanzhou
- 专利权人： UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- 当前专利权人： UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu; CN Quanzhou
- 代理商 Winston Hsu
- 优先权： CN201611258003.0 20161230
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L23/528 ; H01L21/311 ; H01L27/108 ; H01L21/768 ; H01L23/522 ; H01L21/762 ; H01L29/06
摘要：
A semiconductor memory device and a manufacturing method thereof are provided in the present invention. An under-cut structure is formed at an edge of a bit line contact opening in the process of forming the bit line contact opening for avoiding short problems caused by alignment shifting, and the process window of the process of forming the bit line contact opening may be improved accordingly.
公开/授权文献
- US20190304909A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2019-10-03
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