According to an example embodiment of the present inventive concept, a semiconductor device includes a substrate. A first insulating layer is disposed on the substrate. A thin-film resistor is disposed in the first insulating layer. A capacitor structure is disposed on the first insulating layer and includes a first electrode pattern, a first dielectric pattern, a second electrode pattern, a second dielectric pattern and a third electrode pattern sequentially stacked. A first via is connected to the first electrode pattern and the third electrode pattern. A part of the first via is disposed in the first insulating layer. A second via is connected to the second electrode pattern, and a third via is connected to the thin-film resistor.