Invention Grant
- Patent Title: Raw material for vapor deposition including organoplatinum compound and vapor deposition method using the raw material for vapor deposition
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Application No.: US16628195Application Date: 2018-07-12
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Publication No.: US11149045B2Publication Date: 2021-10-19
- Inventor: Ryosuke Harada , Shigeyuki Ootake , Toshiyuki Shigetomi , Kazuharu Suzuki
- Applicant: TANAKA KIKINZOKU KOGYO K.K.
- Applicant Address: JP Tokyo
- Assignee: TANAKA KIKINZOKU KOGYO K.K.
- Current Assignee: TANAKA KIKINZOKU KOGYO K.K.
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JPJP2017-143327 20170725
- International Application: PCT/JP2018/026261 WO 20180712
- International Announcement: WO2019/021836 WO 20190131
- Main IPC: H01L21/285
- IPC: H01L21/285 ; C07F15/00 ; C23C16/18 ; H01L29/45

Abstract:
A raw material for vapor deposition for producing a platinum thin film or a platinum compound thin film by a vapor deposition method. The raw material for vapor deposition includes an organoplatinum compound represented by the following formula, in which a cyclopentene-amine ligand and an alkyl ligand are coordinated to divalent platinum. The organoplatinum compound of the present invention has moderate thermal stability and can respond flexibly to severe film formation conditions, including a wider film formation area, higher throughput, and the like. (In the formula, R1, R2, and R3 are each any one of a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an amino group, an imino group, a cyano group, and an isocyano group, each having 4 or less carbon atoms, and R4 and R5 are each an alkyl group having 1 or more and 3 or less carbon atoms.)
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Information query
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