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1.发明授权公开(公告)号：US10465283B2
公开(公告)日：2019-11-05
申请号：US15558057
申请日：2016-05-09
发明人： Ryosuke Harada , Toshiyuki Shigetomi , Kazuharu Suzuki , Shunichi Nabeya , Akiko Kumakura , Rumi Kobayashi , Takayuki Sone
IPC分类号： C07F15/00 , C23C16/18 , C07C211/21 , H01L21/285 , C23C16/46 , H01L49/02
摘要： An organoplatinum compound with the following formula for use as a raw material in the chemical deposition of platinum compound thin films. In the formula, n is 1 or more and 5 or less. Each of substituents R1 to R5 on the alkenyl amine is a hydrogen atom, an alkyl group or the like and has a carbon number of 4 or less. Each of alkyl anions R6 and R7 is an alkyl group having a carbon number of 1 or more and 3 or less. The vapor pressure of the organoplatinum compound is high enough to allow for the manufacturing of a platinum thin film at low temperature. It also has moderate thermal stability.
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公开(公告)号：US10131987B2
公开(公告)日：2018-11-20
申请号：US15514778
申请日：2015-09-24
发明人： Ryosuke Harada , Toshiyuki Shigetomi , Kazuharu Suzuki , Shunichi Nabeya , Takayuki Sone , Akiko Kumakura
摘要： The invention provides a raw material for chemical deposition having properties required for a CVD compound, that is, which has a high vapor pressure, can be formed into a film at low temperatures (about 250° C. or less), and also has moderate thermal stability. The invention relates to a raw material for chemical deposition, for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, the raw material for chemical deposition including an organoruthenium compound represented by the following formula, in which a cyclohexadienyl group or a derivative thereof and a pentadienyl group or a derivative thereof are coordinated to ruthenium: wherein the substituents R1 to R12 are each independently a hydrogen atom, a linear or cyclic hydrocarbon, an amine, an imine, an ether, a ketone, or an ester, and the substituents R1 to R12 each have 6 or less carbon atoms.
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3.发明申请METHOD FOR RECYCLING ORGANIC RUTHENIUM COMPOUND FOR CHEMICAL VAPOR DEPOSITION 有权用于回收化学蒸气沉积的有机金属化合物的方法公开(公告)号：US20150087851A1
公开(公告)日：2015-03-26
申请号：US14396861
申请日：2013-06-06
IPC分类号： C07F15/00
CPC分类号： C07F15/0046 , B01J23/42 , B01J23/44 , B01J23/462 , B01J25/02 , C07C45/79 , C07C45/85 , C07C49/92
摘要： The present invention is a method for recycling an organic ruthenium compound for chemical vapor deposition, wherein an unreacted organic ruthenium compound is extracted from a used raw material through a thin film formation process. The method includes the following steps (a) to (c). (a) A modification step in which the used raw material and a hydrogenation catalyst are brought into contact with each other in a hydrogen atmosphere, thereby hydrogenating an oxidized organic ruthenium compound in the used raw material. (b) An adsorption step in which the used raw material and an adsorbent are brought into contact with each other, thereby removing impurities in the used raw material. (c) A restoration step in which the used raw material is heated at a temperature that is not lower than −100° C. and not higher than −10° C. with respect to the decomposition temperature of the organic ruthenium compound for eight hours or more, thereby adjusting the ratio of the isomers of the organic ruthenium compound in the used raw material.
摘要翻译： 本发明是一种用于化学气相沉积的有机钌化合物的再循环方法，其中通过薄膜形成方法从使用的原料中提取未反应的有机钌化合物。 该方法包括以下步骤（a）至（c）。 （a）在氢气氛中使使用的原料和氢化催化剂彼此接触的改性步骤，从而使所使用的原料中的氧化的有机钌化合物氢化。 （b）使原料和吸附剂相互接触的吸附工序，除去原料中的杂质。 （c）将有机钌化合物的分解温度在不低于-100℃且不高于-10℃的温度下加热8小时的恢复步骤 以上，由此调整所使用的原料中的有机钌化合物的异构体的比例。
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公开(公告)号：US11084837B2
公开(公告)日：2021-08-10
申请号：US16478417
申请日：2018-03-05
摘要： The present invention relates to a chemical deposition raw material for manufacturing an iridium thin film or an iridium compound thin film by a chemical deposition method, including an iridium complex in which cyclopropenyl or a derivative thereof and a carbonyl ligand are coordinated to iridium. The iridium complex that is applied in the present invention enables an iridium thin film to be manufactured even when a reducing gas such as hydrogen is applied. in which R1 to R3, which are substituents of the cyclopropenyl ligand, are each independently hydrogen, or a linear or branched alkyl group with a carbon number of 1 or more and 4 or less.
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公开(公告)号：US10533027B2
公开(公告)日：2020-01-14
申请号：US16060105
申请日：2016-12-22
发明人： Hideo Konno , Junichi Taniuchi , Ryosuke Harada , Toshiyuki Shigetomi , Rumi Kobayashi , Yasushi Masahiro
摘要： The present invention provides a method for producing a cyclometalated iridium complex by use of a non-chlorine iridium raw material. The method for producing a cyclometalated iridium complex includes producing a cyclometalated iridium complex by reacting a raw material including an iridium compound with an aromatic heterocyclic bidentate ligand capable of forming an iridium-carbon bond, the raw material being non-halogenated iridium having a conjugated base of a strong acid as a ligand. Here, the non-halogenated iridium is preferably one containing a conjugated base of a strong acid having a pKa of 3 or less as a ligand.
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6.发明授权公开(公告)号：US09556212B2
公开(公告)日：2017-01-31
申请号：US14422292
申请日：2013-08-19
发明人： Ryosuke Harada , Naoki Nakata , Masayuki Saito
CPC分类号： C07F15/0046 , C23C16/18 , C23C16/46
摘要： The present invention provides a raw material, formed of a ruthenium complex, for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, wherein the ruthenium complex is a ruthenium complex represented by the following formula, in which carbonyl groups and a fluoroalkyl derivative of a polyene are coordinated to ruthenium. The present invention provides a raw material for chemical deposition having a preferable decomposition temperature, and the production cost therefor is low: (nR-L)Ru(CO)3 [Chemical Formula 1] wherein L is a polyene having a carbon number of from 4 to 8 and 2 to 4 double bonds, wherein the polyene L has n (n≧1) pieces of substituents Rs, wherein the substituents Rs are each a fluoroalkyl group having a carbon number of from 1 to 6 and a fluorine number of from 1 to 13, and in the case when the polyene L has two or more (n≧2) of the substituents Rs, the carbon numbers and the fluorine numbers of the substituents Rs may be different in the same molecule.
摘要翻译： 本发明提供一种由钌络合物形成的原料，用于通过化学沉积法制备钌薄膜或钌化合物薄膜，其中钌络合物是下式表示的钌络合物，其中羰基 多烯的氟烷基衍生物与钌配位。 本发明提供了具有优选的分解温度的化学沉积原料，其生产成本低：€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ ƒ€ƒƒ（nR-L）Ru（CO）3其中L是碳数为4至8的多烯和2至4个双键，其中多烯L具有n（n‰1） 取代基R 5，其中取代基R 5分别为碳数为1〜6，氟数为1〜13的氟代烷基，多烯L具有两个以上（n‰）2以下的 取代基Rs的取代基Rs，碳数和氟数可以在同一分子中不同。
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7.发明授权Method for extracting asymmetric β-diketone compound from β-diketone compound 有权从β-二酮化合物中提取不对称＆bgr-二酮化合物的方法公开(公告)号：US09284249B2
公开(公告)日：2016-03-15
申请号：US14438963
申请日：2013-10-17
IPC分类号： C07C45/80
摘要： The present invention provides a method of extracting an asymmetric β-diketone compound from a β-diketone compound containing at least one symmetric β-diketone compound mixed in the asymmetric β-diketone compound, and the method includes the step (A) of adjusting a pH of a mixed solution of the β-diketone compound and water at 11.5 or more and dissolving the β-diketone compound into water to form a β-diketone compound solution and the step (B) of subsequently adjusting the pH of the β-diketone compound solution at 9.5 or less and recovering the asymmetric β-diketone compound of Chemical Formula 1 separated from the β-diketone compound solution. The present invention further includes at least either (a) a step of setting the upper limit of the pH of the mixed solution to 12.5 to form a β-diketone compound solution in the step (A) and bringing the β-diketone compound solution into contact with a hydrophobic solvent or (b) a step of setting the lower limit of the pH of the β-diketone compound solution to 8.0 in the step (B).
摘要翻译： 本发明提供了从含有至少一种混合在不对称 - 二 - 二酮化合物中的对称二酮化合物的β-二酮化合物中提取不对称二酮化合物的方法，该方法包括步骤（A ）将所述二 - 二酮化合物和水的混合溶液的pH调节至11.5以上，并将所述二酮化合物溶解在水中以形成二酮化合物溶液，并且随后调整步骤（B） 将二 - 二酮化合物溶液的pH调节至9.5或更低，并回收分离自二 - 二酮化合物溶液的化学式1的不对称 - 二酮化合物。 本发明还包括（a）将步骤（A）中将混合溶液的pH值的上限设定为12.5以形成步骤（A）中的β-二酮化合物溶液并使该二酮化合物 溶液与疏水性溶剂接触，或（b）在步骤（B）中将β-二酮化合物溶液的pH下限设定为8.0的步骤。
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8.发明申请METHOD FOR EXTRACTING ASYMMETRIC B-DIKETONE COMPOUND FROM B-DIKETONE COMPOUND 有权从β-二酮化合物中提取不对称的β-二酮酮化合物的方法公开(公告)号：US20150291497A1
公开(公告)日：2015-10-15
申请号：US14438963
申请日：2013-10-17
IPC分类号： C07C45/80
摘要： The present invention provides a method of extracting an asymmetric β-diketone compound from a β-diketone compound containing at least one symmetric β-diketone compound mixed in the asymmetric β-diketone compound, and the method includes the step (A) of adjusting a pH of a mixed solution of the β-diketone compound and water at 11.5 or more and dissolving the β-diketone compound into water to form a β-diketone compound solution and the step (B) of subsequently adjusting the pH of the β-diketone compound solution at 9.5 or less and recovering the asymmetric β-diketone compound of Chemical Formula 1 separated from the β-diketone compound solution. The present invention further includes at least either (a) a step of setting the upper limit of the pH of the mixed solution to 12.5 to form a β-diketone compound solution in the step (A) and bringing the β-diketone compound solution into contact with a hydrophobic solvent or (b) a step of setting the lower limit of the pH of the β-diketone compound solution to 8.0 in the step (B).
摘要翻译： 本发明提供了从含有至少一种混合在不对称 - 二 - 二酮化合物中的对称二酮化合物的β-二酮化合物中提取不对称二酮化合物的方法，该方法包括步骤（A ）将所述二 - 二酮化合物和水的混合溶液的pH调节至11.5以上，并将所述二酮化合物溶解在水中以形成二酮化合物溶液，并且随后调整步骤（B） 将二 - 二酮化合物溶液的pH调节至9.5或更低，并回收分离自二 - 二酮化合物溶液的化学式1的不对称 - 二酮化合物。 本发明还包括（a）将步骤（A）中将混合溶液的pH值的上限设定为12.5以形成步骤（A）中的β-二酮化合物溶液并使该二酮化合物 溶液与疏水性溶剂接触，或（b）在步骤（B）中将β-二酮化合物溶液的pH下限设定为8.0的步骤。
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公开(公告)号：US11149045B2
公开(公告)日：2021-10-19
申请号：US16628195
申请日：2018-07-12
IPC分类号： H01L21/285 , C07F15/00 , C23C16/18 , H01L29/45
摘要： A raw material for vapor deposition for producing a platinum thin film or a platinum compound thin film by a vapor deposition method. The raw material for vapor deposition includes an organoplatinum compound represented by the following formula, in which a cyclopentene-amine ligand and an alkyl ligand are coordinated to divalent platinum. The organoplatinum compound of the present invention has moderate thermal stability and can respond flexibly to severe film formation conditions, including a wider film formation area, higher throughput, and the like. (In the formula, R1, R2, and R3 are each any one of a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an amino group, an imino group, a cyano group, and an isocyano group, each having 4 or less carbon atoms, and R4 and R5 are each an alkyl group having 1 or more and 3 or less carbon atoms.)
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公开(公告)号：US10815260B2
公开(公告)日：2020-10-27
申请号：US15744751
申请日：2016-08-23
IPC分类号： C23C16/16 , C07F15/00 , C23C16/455 , C23C16/18 , C09D1/00 , C09D5/24 , H01L21/285 , H01L21/3205
摘要： The present invention relates to a chemical vapor deposition raw material for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, the chemical vapor deposition raw material including a dinuclear ruthenium complex in which carbonyl and a nitrogen-containing organic ligand (L) are coordinated to metallically bonded two rutheniums, the dinuclear ruthenium complex being represented by the following formula (1): A raw material according to the present invention is capable of producing a high-purity ruthenium thin film, and has a low melting point and moderate thermal stability. Thus, the raw material according to the present invention is suitable for use in electrodes of various kinds of devices.
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