Invention Grant
- Patent Title: Semiconductor package, method of fabricating semiconductor package, and method of fabricating redistribution structure
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Application No.: US16411586Application Date: 2019-05-14
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Publication No.: US11152309B2Publication Date: 2021-10-19
- Inventor: Kyoung Lim Suk
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, PC
- Priority: KR10-2018-0119089 20181005
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L21/48 ; H01L23/498 ; H01L23/31 ; H01L25/10 ; H01L23/00

Abstract:
A method of fabricating a semiconductor package may include forming a lower redistribution layer, forming a stack on a portion of the lower redistribution layer, and stacking a semiconductor chip on a top surface of the lower redistribution layer. The forming of the stack may include coating a photo imagable dielectric material to form a first insulating layer on the top surface of the lower redistribution layer, forming a first via to penetrate the first insulating layer, coating a photo imagable dielectric material to form a second insulating layer on a top surface of the first insulating layer, and forming a second via to penetrate the second insulating layer.
Information query
IPC分类: