Invention Grant
- Patent Title: Method for manufacturing semiconductor device
-
Application No.: US16532107Application Date: 2019-08-05
-
Publication No.: US11152487B2Publication Date: 2021-10-19
- Inventor: Huan-Chieh Su , Zhi-Chang Lin , Ting-Hung Hsu , Jia-Ni Yu , Wei-Hao Wu , Chih-Hao Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L29/66 ; H01L27/088 ; H01L21/8234 ; H01L21/8238 ; H01L27/092 ; H01L29/49 ; H01L29/78 ; H01L29/423 ; H01L29/165
Abstract:
A method for manufacturing a semiconductor device is provided. The method for manufacturing a semiconductor device includes forming a gate electrode layer in a gate trench; filling a recess in the gate electrode layer with a dielectric feature; and etching back the gate electrode layer from top end surfaces of the gate electrode layer while leaving a portion of the gate electrode layer under the dielectric feature.
Information query
IPC分类:
