The first film forming device is configured to form a film using plasma in a consistent vacuum state. In the forming of the first substrate product, the first substrate product is formed in a consistent vacuum state. The first substrate product has the support base, a first lamination region, and a metal region. The first lamination region is provided on the support base. The metal region is provided on the first lamination region, and has a first metal layer and a second metal layer. The first metal layer is provided on the first lamination region, and the second metal layer is provided on the first metal layer. A material of the first metal layer has TiN or Ta, and a material of the second metal layer has TaN or Ru.