- 专利标题： Semiconductor device structure with semiconductor wire
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申请号： US16676871申请日： 2019-11-07
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公开(公告)号： US11158542B2公开(公告)日： 2021-10-26
- 发明人: Hung-Li Chiang , I-Sheng Chen , Tzu-Chiang Chen , Tung-Ying Lee , Szu-Wei Huang , Huan-Sheng Wei
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McClure, Qualey & Rodack, LLP
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L27/092 ; H01L29/06 ; H01L29/423 ; H01L29/786 ; H01L29/66 ; H01L21/02 ; H01L29/04
摘要：
Semiconductor device structures are provided. The semiconductor device structure includes a number of first semiconductor wires over a semiconductor substrate, and the first semiconductor wires are vertically spaced apart from each other. The semiconductor device structure includes a first gate stack partially wrapping the first semiconductor wires, and a spacer element adjacent to the first gate stack. Each of the first semiconductor wires has a first portion directly below the spacer element and a second portion directly below the first gate stack, the first portion has a first width, the second portion has a second width, and the first width is greater than the second width.
公开/授权文献
- US20200075427A1 SEMICONDUCTOR DEVICE STRUCTURE WITH SEMICONDUCTOR WIRE 公开/授权日：2020-03-05
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