Invention Grant
- Patent Title: Semiconductor arrangement and method of forming
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Application No.: US16695071Application Date: 2019-11-25
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Publication No.: US11158546B2Publication Date: 2021-10-26
- Inventor: Harry-Hak-Lay Chuang , Wei Cheng Wu , Chin-Yi Huang , Shih-Chang Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L29/788 ; H01L21/8238

Abstract:
A semiconductor arrangement is provided comprising a guard region. The semiconductor arrangement comprises an active region disposed on a first side of the guard region. The active region comprises an active device. The guard region of the semiconductor arrangement comprises residue from the active region. A method of forming a semiconductor arrangement is also provided.
Public/Granted literature
- US20200098647A1 SEMICONDUCTOR ARRANGEMENT AND METHOD OF FORMING Public/Granted day:2020-03-26
Information query
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