- 专利标题: Pattern formation method, block copolymer, and pattern formation material
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申请号: US17082259申请日: 2020-10-28
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公开(公告)号: US11161999B2公开(公告)日: 2021-11-02
- 发明人: Norikatsu Sasao , Koji Asakawa , Tomoaki Sawabe , Shinobu Sugimura
- 申请人: Toshiba Memory Corporation
- 申请人地址: JP Tokyo
- 专利权人: Toshiba Memory Corporation
- 当前专利权人: Toshiba Memory Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner L.L.P.
- 优先权: JPJP2017-234631 20171206
- 主分类号: C09D153/00
- IPC分类号: C09D153/00 ; C08F20/28 ; C09D125/06 ; C09D133/14 ; C08F12/08 ; G03F7/00 ; B05D5/00
摘要:
According to one embodiment, a pattern formation method is disclosed. The method includes a preparation process, a block copolymer layer formation process, and a contact process. The preparation process includes preparing a pattern formation material including a block copolymer including a first block and a second block. The first block includes a first main chain and a plurality of first side chains. At least one of the first side chains includes a plurality of carbonyl groups. The block copolymer layer formation process includes forming a block copolymer layer on a first member. The block copolymer layer includes the pattern formation material and includes a first region and a second region. The first region includes the first block. The second region includes the second block. The contact process includes causing the block copolymer layer to contact a metal compound including a metallic element.
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