- 专利标题: Method of forming contact holes in a fan out package
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申请号: US16567804申请日: 2019-09-11
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公开(公告)号: US11164829B2公开(公告)日: 2021-11-02
- 发明人: Feng-Cheng Hsu , Szu-Wei Lu , Jing-Cheng Lin
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Slater Matsil, LLP
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; H01L23/48 ; H01L21/56 ; H01L23/31
摘要:
Methods of forming packages include forming an encapsulant laterally encapsulating a die over an active surface of the die. The active surface has an electrical pad. A first opening is formed through the encapsulant to the electrical pad. In some embodiments the first opening is formed using a photolithographic technique. In some embodiments the first opening is formed using a temporary pillar by forming the temporary pillar over the electrical pad, forming the encapsulant, and then exposing and removing the temporary pillar. A conductive pattern is formed over the encapsulant including a via formed in the first opening to the electrical pad of the die's active surface. In some embodiments, a dielectric layer is formed over the encapsulant, and the conductive pattern is over the dielectric layer. Embodiments may include forming additional dielectric layers and conductive patterns.
公开/授权文献
- US20200006264A1 Method of Forming Contact Holes in a Fan Out Package 公开/授权日:2020-01-02
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