Invention Grant
- Patent Title: Dispersion reduced dielectric waveguide comprising dielectric materials having respective dispersion responses
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Application No.: US16463329Application Date: 2016-12-30
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Publication No.: US11165129B2Publication Date: 2021-11-02
- Inventor: Georgios Dogiamis , Sasha Oster , Telesphor Kamgaing
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- International Application: PCT/US2016/069540 WO 20161230
- International Announcement: WO2018/125227 WO 20180705
- Main IPC: H01P3/16
- IPC: H01P3/16 ; H01P3/12 ; H01P11/00 ; H01P5/08

Abstract:
Embodiments of the invention include a dispersion reduced dielectric waveguide and methods of forming such devices. In an embodiment, the dispersion reduced dielectric waveguide may include a first dielectric material that has a first Dk-value, and a second dielectric material that has a second Dk-value that is greater than the first Dk-value. In an embodiment, the dispersion reduced dielectric waveguide may also include a conductive layer formed around the first and second dielectric materials. According to an embodiment, a first portion of a bandwidth of a signal that is propagated along the dispersion reduced dielectric waveguide is primarily propagated along the first dielectric material, and a second portion of a bandwidth of the signal that is propagated along the dispersion reduced dielectric waveguide is primarily propagated along the second dielectric material.
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