Invention Grant
- Patent Title: Method and device for measuring contamination in EUV source
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Application No.: US16697149Application Date: 2019-11-26
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Publication No.: US11166361B2Publication Date: 2021-11-02
- Inventor: Kuan-Hung Chen , Shang-Chieh Chien , Li-Jui Chen , Po-Chung Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H05G2/00
- IPC: H05G2/00 ; G03F7/20

Abstract:
A lithography apparatus includes an extreme ultraviolet (EUV) scanner, an EUV source coupled to the EUV scanner, a quartz crystal microbalance and a feedback controller. The quartz crystal microbalance is disposed on an internal surface of at least one of the EUV source and the EUV scanner. The feedback controller is coupled to the quartz crystal microbalance and one or more of a radiation source, a droplet generator, and optical guide elements controlling the trajectory of the radiation source associated with the EUV source.
Public/Granted literature
- US20200178380A1 METHOD AND DEVICE FOR MEASURING CONTAMINATION IN EUV SOURCE Public/Granted day:2020-06-04
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