- 专利标题： NASICON-type sodium cathode material
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申请号： US16675866申请日： 2019-11-06
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公开(公告)号： US11167990B2公开(公告)日： 2021-11-09
- 发明人: Yan Wang , Dong-Hwa Seo , Jingyang Wang , Gerbrand Ceder
- 申请人： Samsung Electronics Co., Ltd. , The Regents of the University of California
- 申请人地址： KR Suwon-si; US CA Oakland
- 专利权人： Samsung Electronics Co., Ltd.,The Regents of the University of California
- 当前专利权人： Samsung Electronics Co., Ltd.,The Regents of the University of California
- 当前专利权人地址： KR Suwon-si; US CA Oakland
- 代理机构： Cantor Colburn LLP
- 主分类号： H01B1/06
- IPC分类号： H01B1/06 ; H01M4/58 ; C01B25/45 ; H01M10/054 ; H01M4/02
摘要：
A compound of Formula I: NaxMnaMb(PO4−δ)3 (I) wherein M is V, Nb, Ga, Cr, Ti, Zr, or a combination thereof, a is equal to or greater than 0.8 to equal to or less than 1.5, b is equal to or greater than 0.5 to equal to or less than 1.2, x is greater than 0 to equal to or less than 4, δ is equal to or greater than 0 to equal to or less than 1, and a sum of a and b is 2.
公开/授权文献
- US20200308000A1 NASICON-TYPE SODIUM CATHODE MATERIAL 公开/授权日：2020-10-01
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