- Patent Title: Feedback for power management of a memory die using a dedicated pin
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Application No.: US16740293Application Date: 2020-01-10
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Publication No.: US11169587B2Publication Date: 2021-11-09
- Inventor: Baekkyu Choi , Thomas H. Kinsley , Fuad Badrieh
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G06F1/00
- IPC: G06F1/00 ; G06F1/3225 ; G06F1/30

Abstract:
A memory device may include a pin for communicating feedback regarding a supply voltage to a power management component, such as a power management integrated circuit (PMIC). The memory device may bias the pin to a first voltage indicating that a supply voltage is within a target range. The memory device may subsequently determine that a supply voltage is outside the target range and transition the voltage at the pin from the first voltage to a second voltage indicating that the supply voltage is outside the target range. The memory device may select the second voltage based on whether the supply voltage is above or below the target range.
Public/Granted literature
- US20210216130A1 FEEDBACK FOR POWER MANAGEMENT OF A MEMORY DIE USING A DEDICATED PIN Public/Granted day:2021-07-15
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