Invention Grant
- Patent Title: Methods and apparatus for dechucking wafers
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Application No.: US16403850Application Date: 2019-05-06
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Publication No.: US11171030B2Publication Date: 2021-11-09
- Inventor: Hamid Noorbakhsh , Anwar Husain , Haitao Wang , Sergio F Shoji
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01J37/32 ; H01L21/67

Abstract:
Methods and apparatus for dechucking a wafer from a surface of an electrostatic chuck (ESC). In some embodiments, a method comprises reducing a pressure of a gas applied to a backside of the wafer to approximately zero psi; reducing a downward pressure in a cylinder bore of a lifting actuator to approximately atmospheric pressure while a processing volume of the processing chamber is in a vacuum state to create a constant upward force on the wafer, the constant upward force less than a breaking force of the wafer; and sweeping a voltage applied to the ESC to dechuck the wafer; and monitoring a sensor on the lifting actuator that is interposed between a chucking position of the lifting actuator and a transfer position of the lifting actuator to detect when the wafer is dechucked.
Public/Granted literature
- US2574581A Alloying magnesium with ferrous metals Public/Granted day:1951-11-13
Information query
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